The proceedings were printed from the authors' camera-ready manuscripts. In addition, a panel discussion on "Future Requirements and Trends in Multidimensional TCAD Simulation" was held during the Workshop. Nine of these presentations are included in this book. The workshop consisted of ten invited presentations, among which four were from leading semiconductor companies, six were from research Centers of Excellence. Within the "Workshop on 3D Process Simulation", an overview of the activities being carried out in Japan, the USA, and Europe was given. In consequence, it can be expected that three-dimensional process simulation will prove to be a key component in advanced TCAD systems within the next few years. Major research and development activities dedicated to three-dimensional process simulation are presently being carried out around the world. Technological demands from novel ULSI technologies require the availability of advanced three-dimensional process simulation tools to provide appropriate input to three-dimensional device simulation and, in this way, to allow for the support of LTI,$I device development and optimization. In contrast to this, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary J?asic developments. However, considerable improvements are still required in terms of the accuracy of the models used and the algorithms implemented, especially for adaptive meshing in case of time-dependent device geometries. In consequence, well established program systems are available both via commercial software houses and from research institutes or universities. Two-dimensional process simulation has achieved a certain degree of maturity. The workshop follows the International "Workshop on Technology CAD Systems" which was held at the Technical University of Vienna in conjunction with SISDEP '93. 5, 199.5, in conjunction with the 6th International Conference on "Simulation of Semiconductor Devices and Processes" (SISDEP '9.5). ISBN-13:978-3-7091-7430-2 e-ISBN-13:978-3-7091-6905-6 DOl: 10.1007/978-3-7091-6905-6ĮDITORIAL This volume contains the Proceedings of the International "Workshop on 3D Process Simulation" which was held at the Campus of the University of Erlangen-Nuremberg in Erlangen on September. Typesetting: Camera ready by authors Printed on acid-free and chlorine free bleached paper © 1995 Springer-Verlag/Wien Softcover reprint of the hardcover 1st edition 1995 All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. Lorenz Fraunhofer-Institut fur Integrierte Schaltungen Bauelementetechnologie Schottkystrasse 10 D-91058 Erlangen Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments.
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